MAX1180ECM

The MAX1180ECM is one member of the MAX1180 family which is designed as the dual 10-bit, 105Msps, +3.3V, low-power ADC that can be used in (1)high resolution imaging; (2)I/Q channel digitization; (3)multichannel IF undersampling; (4)instrumentation; (5)video application. This device operates from a single +2.7V to +3.6V supply, consuming only 413mW, and features parallel, CMOS-compatible
three-state outputs.

Features of the MAX1180ECM are:(1)single +3.3V operation; (2)excellent dynamic performance: 58.5dB SNR at fIN = 20MHz, 72dB SFDR at fIN = 20MHz; (3)SNR Flat within 1dB for fIN = 202MHz to 100MHz; (4)low power: 125mA (normal operation), 2.8mA (sleep mode), 1A (shutdown mode); (5)0.02dB gain and 0.25° phase matching (typ); (6)wide ±1Vp-p differential analog input voltage range; (7)400MHz, -3dB input bandwidth; (8)on-chip +2.048V precision bandgap reference; (9)user-selectable output format-two's complement or offset binary; (10)48-pin TQFP package with exposed pad for improved thermal dissipation.

The absolute maximum ratings of the MAX1180ECM can be summarized as:(1)VDD, OVDD to GND: -0.3 V to +3.6 V;(2)OGND to GND: -0.3 V to +0.3 V;(3)INA+, INA-, INB+, INB- to GND: -0.3 V to VDD;(4)Lead Temperature (soldering, 10s): +300°C;(5)Storage Temperature Range: -60°C to +150°C;(6)Junction Temperature: +150°C;(7)Operating Temperature Range: -40°C to +85°C;(8)Continuous Power Dissipation 48-Pin TQFP (derate 12.5mW/°C above +70°C): 1000 mW.

The electrical characteristics of MAX1180ECM can be summarized as:(1)Resolution: 10 Bits;(2)Integral Nonlinearity: ±0.75 to ±2.5 LSB;(3)Differential Nonlinearity: -1 to +1.5 LSB;(4)Offset Error: <±1 to ±1.7 % FS;(5)Differential Input Voltage Range: ±1.0 V;(6)Input Resistance: 20 k;(7)Input Capacitance: 5 pF;(8)Maximum Clock Frequency: 105 MHz;(9)Maximum REFN Sink Current: -5 mA;(10)Maximum REFN Source Current: 250 A. If you want to know more information such as the electrical characteristics about it, please download the datasheet in www.seekic.com or www.chinaicmart.com.