Features: ·Dual Matched PNP Transistor·Low Offset Voltage: 100 mV max·Low Noise: 1 nV/ÖHz @ 1 kHz max·High Gain: 100 min·High Gain Bandwidth: 190 MHz typ·Tight Gain Matching: 3% max·Excellent Logarithmic Conformance: rBE . 0.3 V typ·Available in Die FormPinoutSpecificationsCollector-Base Volt...
MAT03: Features: ·Dual Matched PNP Transistor·Low Offset Voltage: 100 mV max·Low Noise: 1 nV/ÖHz @ 1 kHz max·High Gain: 100 min·High Gain Bandwidth: 190 MHz typ·Tight Gain Matching: 3% max·Excellent L...
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The MAT03 dual monolithic PNP transistor offers excellent parametric matching and high frequency performance. Low noise characteristics (1 nV/ÖHz max @ 1 kHz), high bandwidth (190 MHz typical), and low offset voltage (100 mV max), makes the MAT03 an excellent choice for demanding preamplifier applications. Tight current gain matching (3% max mismatch) and high current gain (100 min), over a wide range of collector current, makes the MAT03 an excellent choice for current mirrors. A low value of bulk resistance (typically 0.3 W) also makes the MAT03 an ideal component for applications requiring accurate logarithmic conformance.
The MAT03 is individually tested to data sheet specifications. Device performance is guaranteed at 25°C and over the extended industrial and military temperature ranges. To insure the longterm stability of the matching parameters, internal protection diodes across the base-emitter junction clamp any reverse baseemitter junction potential. This prevents a base-emitter breakdown condition which can result in degradation of gain and matching performance due to excessive breakdown current.