Features: • Supplied as Known Good Die• Dual/tri/quad-band GSM/GPRS/EDGE• Low Voltage: 2.5V Operation• Low Harmonics: -72 dBc at +35 dBm & 1 GHz• Low Insertion Loss: 0.5 dB at 1 GHz• High Tx-Rx Isolation: 38 dB at 2 GHzSpecifications Parameter Abso...
MASWSS0091: Features: • Supplied as Known Good Die• Dual/tri/quad-band GSM/GPRS/EDGE• Low Voltage: 2.5V Operation• Low Harmonics: -72 dBc at +35 dBm & 1 GHz• Low Insertion Loss...
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RF Switch ICs 50-2500MHz ISO 47dB IL .5dB @ 1GHz
Parameter |
Absolute Maximum |
Input Power (0.5 - 2.5 GHz, 2.5V Control) |
+38 dBm |
Voltage |
±8.5 volts |
Operating Temperature |
-40°C to +85°C |
Storage Temperature |
-65°C to +150°C |
M/A-COM's MASWSS0091 is a GaAs PHEMT MMIC single pole six throw (SP6T) high power switch die. The MASWSS0091 is ideally suited for applications where high power, low control voltage, low insertion loss, high isolation, small size and low cost are required. The MASWSS0091 is designed for dual-, tri-, and quad-band GSM and DCS/PCS handset systems that connect separate transmit and receive functions to a common antenna, and can be used in all systems operating up to 2.5 GHz requiring high power at low control voltage.
The MASWSS0091 is fabricated using a 0.5 micron gate length GaAs PHEMT process. The process features full passivation for performance and reliability.