Features: • Low Harmonic Knee Voltage < 2.5V• Low Harmonics > 65 dBc at +34 dBm & 1 GHz• Low Insertion Loss 0.45 dB at 1 GHz• High Isolation 18.5 dB at 2 GHz• FQFP 12-lead 3x3mm Low Profile Package• 0.5 micron GaAs pHEMT ProcessSpecifications Pa...
MASWSS0033: Features: • Low Harmonic Knee Voltage < 2.5V• Low Harmonics > 65 dBc at +34 dBm & 1 GHz• Low Insertion Loss 0.45 dB at 1 GHz• High Isolation 18.5 dB at 2 GHz•...
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RF Switch ICs 50-2500MHz ISO 47dB IL .5dB @ 1GHz
Parameter |
Absolute Maximum |
Max Input Power (0.5 - 2.5 GHz, 2.5V Control) |
+38 dBm |
Operating Voltage |
+8.5 volts |
Operating Temperature |
-40 oC to +85 oC |
Storage Temperature |
-65 oC to +150 oC |
M/A-COM's MASWSS0033 is a GaAs PHEMT MMIC SP3T high power switch in a low cost miniature FQFP 12-lead 3x3mm thin profile package. This package represents a lower profile than standard FQFP style, featuring a 0.8mm maximum thickness.
The MASWSS0033 is ideally suited for applications where high power, low control voltage, low insertion loss, high isolation, small size and low cost are required. Typical applications are for GSM and DCS handset systems that connect separate transmit and receive functions to a common antenna, as well othe handset and related applications. This part can be used in all systems operating up to 2.5 GHz requiring high power at low control voltage.
The MASWSS0033 is fabricated using a 0.5 micron gate length GaAs PHEMT process. The process features full passivation for performance and reliability.