Features: • Low Voltage Operation 2.5V• Low Harmonics > 65 dBc at +34 dBm & 1 GHz• Low Insertion Loss 0.6 dB at 1 GHz• High Isolation 23 dB at 2 GHz• Miniature FQFP 16-lead 4x4mm Package• 0.5 micron GaAs pHEMT ProcessSpecifications Parameter Abs...
MASWSS0020: Features: • Low Voltage Operation 2.5V• Low Harmonics > 65 dBc at +34 dBm & 1 GHz• Low Insertion Loss 0.6 dB at 1 GHz• High Isolation 23 dB at 2 GHz• Miniature F...
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RF Switch ICs 50-2500MHz ISO 47dB IL .5dB @ 1GHz
Parameter |
Absolute Maximum |
Max Input Power (0.5 - 3 GHz, 2.5V Control) |
+38 dBm |
Operating Voltage |
+8.5 volts |
Operating Temperature |
-40 oC to +85 oC |
Storage Temperature |
-65 oC to +150 oC |
M/A-COM's MASWSS0020 is a GaAs PHEMT MMIC single pole four throw (SP4T) high power switch in a low cost miniature FQFP 16-lead 4x4mm package. The MASWSS0020 is ideally suited for applications where high power, low control voltage, low insertion loss, high isolation, small size and low cost are required. Typical applications are for GSM and DCS handset systems that connect separate transmit and receive functions to a common antenna, as well as other handset and related applications. This part can be used in all systems operating up to 3 GHz requiring high power at low control voltage.
The MASWSS0020 is fabricated using a 0.5 micron gate length GaAs PHEMT process. The process features full passivation for performance and reliability.