Features: • +12 dBm Input Power @ 1 dB Compression• High Isolation, 28 dB LO to RF• +3 to +8 dBm LO Drive Level• DC - 500 MHz 3 dB IF Bandwidth• Does not require DC bias• Lead-Free SOT-25 Package• 100% Matte Tin Plating over Copper• Halogen-Free Gre...
MAMXSS0013: Features: • +12 dBm Input Power @ 1 dB Compression• High Isolation, 28 dB LO to RF• +3 to +8 dBm LO Drive Level• DC - 500 MHz 3 dB IF Bandwidth• Does not require DC bia...
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PARAMETER |
Absolute Maximum |
RF Input Power |
+27 dBm |
LO Drive Power |
+27 dBm |
Operating Temperature |
-40°C to +100°C |
Storage Temperature |
-55°C to +150°C |
6. Exceeding any one or combination of these limits may cause permanent damage to this device.
7. M/A-COM does not recommend sustained operation near these survivability limits.
M/A-COM's MAMXSS0013 is a passive mixer that achieves the performance of a double balanced diode mixer in a lead-free SOT-25 package. The MAMXSS0013 is ideally suited for use where high level RF signals and very wide dynamic range are required. Typical applications include frequency up/ down conversion, modulation and demodulation in receivers and transmitters for base station and portable systems.
The MAMXSS0013 uses FETs as mixing elements to achieve very wide dynamic range in a low cost plastic package. The mixer operates with LO drive levels of +3 dBm to +8 dBm. The LO port may be externally tuned for operation in various frequency bands.
M/A-COM's MAMXSS0013 is fabricated using a mature 0.5 micron gate length GaAs MESFET process. The process features full passivation for increased performance and reliability. The MAMXSS0013 is 100% RF tested to ensure performance specification compliance.