MAMXSS0013

Features: • +12 dBm Input Power @ 1 dB Compression• High Isolation, 28 dB LO to RF• +3 to +8 dBm LO Drive Level• DC - 500 MHz 3 dB IF Bandwidth• Does not require DC bias• Lead-Free SOT-25 Package• 100% Matte Tin Plating over Copper• Halogen-Free Gre...

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SeekIC No. : 004408247 Detail

MAMXSS0013: Features: • +12 dBm Input Power @ 1 dB Compression• High Isolation, 28 dB LO to RF• +3 to +8 dBm LO Drive Level• DC - 500 MHz 3 dB IF Bandwidth• Does not require DC bia...

floor Price/Ceiling Price

Part Number:
MAMXSS0013
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/11/27

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Product Details

Description



Features:

• +12 dBm Input Power @ 1 dB Compression
• High Isolation, 28 dB LO to RF
• +3 to +8 dBm LO Drive Level
• DC - 500 MHz 3 dB IF Bandwidth
• Does not require DC bias
• Lead-Free SOT-25 Package
• 100% Matte Tin Plating over Copper
• Halogen-Free "Green" Mold Compound
• 260°C Reflow Compatible
• RoHS* Compliant Version of MD54-0006



Specifications

PARAMETER
Absolute Maximum
RF Input Power
+27 dBm
LO Drive Power
+27 dBm
Operating Temperature
-40°C to +100°C
Storage Temperature
-55°C to +150°C


6. Exceeding any one or combination of these limits may cause permanent damage to this device.
7. M/A-COM does not recommend sustained operation near these survivability limits.




Description

M/A-COM's MAMXSS0013 is a passive mixer that achieves the performance of a double balanced diode mixer in a lead-free SOT-25 package. The MAMXSS0013 is ideally suited for use where high level RF signals and very wide dynamic range are required. Typical applications include frequency up/ down conversion, modulation and demodulation in receivers and transmitters for base station and portable systems.

The MAMXSS0013 uses FETs as mixing elements to achieve very wide dynamic range in a low cost plastic package. The mixer operates with LO drive levels of +3 dBm to +8 dBm. The LO port may be externally tuned for operation in various frequency bands.

M/A-COM's MAMXSS0013 is fabricated using a mature 0.5 micron gate length GaAs MESFET process. The process features full passivation for increased performance and reliability. The MAMXSS0013 is 100% RF tested to ensure performance specification compliance.




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