Features: • Blocking Voltage to 800 Volts• All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability• Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability• Gate Triggering Guaranteed in Thre...
MAC212A Series: Features: • Blocking Voltage to 800 Volts• All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability• Small, Rugged, Thermowatt Construction for Lo...
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Features: • Blocking Voltage to 800 Volts• All Diffused and Glass Passivated Junctions...
Features: • Blocking Voltage to 800 Volts• All Diffused and Glass Passivated Junctions...
designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering.
SYMBOL |
PARAMETER |
RATING |
UNIT |
Peak Repetitive Off-State Voltage(1) (TJ = 40 to +125°C, 1/2 Sine Wave 50 to 60 Hz, Gate Open) MAC212-4, MAC212A4 MAC212-6, MAC212A6 MAC212-8, MAC212A8 MAC212-10, MAC212A10 |
VDRM |
200 400 600 800 |
Volts |
On-State Current RMS (TC = +85°C) Full Cycle Sine Wave 50 to 60 Hz |
IT(RMS) |
12 |
Amp |
Peak Non-repetitive Surge Current (One Full Cycle, 60 Hz, TC = +85°C) preceded and followed by Rated Current |
ITSM |
100 |
Amp |
Circuit Fusing Considerations (t = 8.3 ms) |
I2t |
40 |
A2s |
Peak Gate Power (TC = +85°C, Pulse Width = 10 ms) |
PGM |
20 |
Watts |
Average Gate Power (TC = +85°C, t = 8.3 ms) |
PG(AV) |
0.35 |
Watt |
Peak Gate Current (TC = +85°C, Pulse Width = 10 ms) |
IGM |
2 |
Amp |
Operating Junction Temperature Range |
TJ |
40 to 125 |
°C |
Storage Temperature Range |
Tstg |
40 to 150 |
°C |