Features: • Broadband Operation• Output Intercept Point Greater than +45 dBm• Excellent ACPR performance• High Efficiency• Lead-Free SOIC-8EP Package• 100% Matte Tin Plating over Copper• Halogen-Free Green Mold Compound• RoHS* Compliant and 260°C R...
MAAMSS0057: Features: • Broadband Operation• Output Intercept Point Greater than +45 dBm• Excellent ACPR performance• High Efficiency• Lead-Free SOIC-8EP Package• 100% Matte ...
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Features: • Low Distortion• Low Noise Figure• Lead-Free 4 mm 20-Lead PQFN Packag...
Features: • 2-Way Splitter, 8.5 dB Gain• Single Ended Input and Outputs• 75 Imp...
Parameter | Absolute Maximum |
RF Output Power | 32 dBm |
Voltage | 6 volts |
Storage Temperature | -65°C to +150°C |
Junction Temperature | 200°C |
M/A-COM's MAAMSS0057 RF driver amplifier is a two stage GaAs MMIC which exhibits exceptional linearity performance as well as featuring high gain in a lead-free SOIC-8EP surface mount plastic package. The device runs off a single +5 volt supply and draws 490 mA typically.
The MAAMSS0057 is fabricated using a high reliability GaAs HBT process to realize low current and high power functionality. The process features full passivation for increased performance and reliability.
The MAAMSS0057 has been designed to be a functional driver amplifier from 250 to 4000 MHz.