Features: ·2.7 dB Typical Noise Figure·15.5 dB Typical Gain·Single Bias Supply·Low Current Consumption·DC Decoupled RF Input and Output·Ceramic PackageSpecifications Parameter Absolute Maximum Input PowerVDDJunction TemperaturStorage TemperatureThermal Resistance +20 dBm+9 Vo l t s...
MAAM71200-H1: Features: ·2.7 dB Typical Noise Figure·15.5 dB Typical Gain·Single Bias Supply·Low Current Consumption·DC Decoupled RF Input and Output·Ceramic PackageSpecifications Parameter Absolute Max...
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Features: • Low Distortion• Low Noise Figure• Lead-Free 4 mm 20-Lead PQFN Packag...
Features: • 2-Way Splitter, 8.5 dB Gain• Single Ended Input and Outputs• 75 Imp...
Parameter |
Absolute Maximum |
Input Power VDD Junction Temperatur Storage Temperature Thermal Resistance |
+20 dBm |
M/A-COM's MAAM71200-H1 is a wide band, low noise GaAs MMIC amplifier enclosed in a leadless ceramic p a c k a g e1. The MAAM71200-H1 is a packaged version of M/A-COM's MAAM71200 low noise MMIC amplifier chip. The fully monolithic design operates in 50 ohms without the need for external components.
The MAAM71200-H1 is ideally suited for micro s t r i p assemblies where wire or ribbon bonds are used for nterconnects. Typical applications include radar, EW and communication systems.
The MAAM71200 is fabricated using a mature 0.5-micro n gate length GaAs process for increased reliability and perf o rmance re p e a t a b i l i t y .