Features: ·Low Noise Figure: 2.2 dB·High Gain: 17 dB·Gain Flatness: ±0.5 dB·Single Supply: +4 V·No External Components Require d·DC Decoupled RF Input and Output·Small, 8-Lead Ceramic PackageSpecifications Parameter Absolute Maximum VDDInput PowerCurrentChannel TemperatureOperating ...
MAAM37000-A1: Features: ·Low Noise Figure: 2.2 dB·High Gain: 17 dB·Gain Flatness: ±0.5 dB·Single Supply: +4 V·No External Components Require d·DC Decoupled RF Input and Output·Small, 8-Lead Ceramic PackageSpecifi...
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Features: • Low Distortion• Low Noise Figure• Lead-Free 4 mm 20-Lead PQFN Packag...
Features: • 2-Way Splitter, 8.5 dB Gain• Single Ended Input and Outputs• 75 Imp...
Parameter |
Absolute Maximum |
VDD Input Power Current Channel Temperature Operating Temperature2 Storage Temperature |
+7 volts |
M/A-COM's MAAM37000-A1 is a wide band, low noise, MMIC amplifier housed in a small 8-lead ceramic package. It includes two integrated gain stages and employs series inductive feedback to obtain excellent noise figure and a good, 50-ohm, input and output impedance match over the entire frequency band. The MAAM37000-A1 operates from a single +4 V supply. It is fully monolithic, re q u i res no external components, and is provided in a u s e r-friendly, microwave package.
The MAAM37000-A1 perf o rms well as a low noise amplifier in receive applications and as a driver or buffer amplifier where high gain, excellent linearity and low power consumption are important. Because of its wide bandwidth, the MAAM37000-A1 can be used in numero u s c o m m e rcial and government system applications, such as TVRO, VSAT, missile guidance and radar.
The MAAM37000-A1 is manufactured in-house using a reliable, 0.5-micron, GaAs MESFET process. This pro d u c t is 100% RF tested to ensure compliance to perf o rm a n c e s p e c i f i c a t i o n s .