Features: ·High Gain: 17 dB·Gain Flatness: ±0.5 dB·Single Supply: +10 V·No External Components Require d·DC Decoupled RF Input and Output·Small, Low Cost 8-Lead Ceramic PackageSpecifications Parameter Absolute Maximum VDDInput PowerCurrentChannel TemperatureOperating Temperature2Stora...
MAAM28000-A1: Features: ·High Gain: 17 dB·Gain Flatness: ±0.5 dB·Single Supply: +10 V·No External Components Require d·DC Decoupled RF Input and Output·Small, Low Cost 8-Lead Ceramic PackageSpecifications ...
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Features: • Low Distortion• Low Noise Figure• Lead-Free 4 mm 20-Lead PQFN Packag...
Features: • 2-Way Splitter, 8.5 dB Gain• Single Ended Input and Outputs• 75 Imp...
·High Gain: 17 dB
·Gain Flatness: ±0.5 dB
·Single Supply: +10 V
·No External Components Require d
·DC Decoupled RF Input and Output
·Small, Low Cost 8-Lead Ceramic Package
Parameter |
Absolute Maximum |
VDD Input Power Current Channel Temperature Operating Temperature2 Storage Temperature |
+14 volts |
M/A-COM's MAAM28000-A1 is a wide band, MMIC amplifier housed in a small 8-lead ceramic package. It includes two distributed gain stages to obtain flat gain and a good, 50-ohm, input and output impedance match over a very wide bandwidth. The MAAM28000-A1 operates from a single +10 V supply. It is fully monolithic, re q u i res no external components, and is provided in a low-cost, user- f r i e n d l y , m i c rowave package.
The MAAM28000-A1 perf o rms well as a generic IF, driver or b u ffer amplifier where high gain, excellent linearity and low power consumption are important. Because of its wide bandwidth, the MAAM28000-A1 can be used in numerous comm e rcial and government system applications, such as satellite communications, RLL, EW and radar.
The MAAM28000-A1 is manufactured in-house using a re l iable, 0.5-micron, GaAs MESFET process. This product is 100% RF tested to ensure compliance to perf o rmances p e c i f i c a t i o n s .