MAAM26100-P1

Features: ·+30 dBm Saturated Output Power·18 dB Typical Gain·30% Power Added Efficiency·On-Chip Bias Network·DC Decoupled RF Input and Output·High Performance Ceramic Bolt Down PackageSpecifications Parameter Absolute Maximum VDDVGGPower DissipationRF Input PowerChannel TemperatureS...

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SeekIC No. : 004408028 Detail

MAAM26100-P1: Features: ·+30 dBm Saturated Output Power·18 dB Typical Gain·30% Power Added Efficiency·On-Chip Bias Network·DC Decoupled RF Input and Output·High Performance Ceramic Bolt Down PackageSpecifications...

floor Price/Ceiling Price

Part Number:
MAAM26100-P1
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

·+30 dBm Saturated Output Power
·18 dB Typical Gain
·30% Power Added Efficiency
·On-Chip Bias Network
·DC Decoupled RF Input and Output
·High Performance Ceramic Bolt Down Package



Specifications

Parameter
Absolute Maximum
VDD
VGG
Power Dissipation
RF Input Power
Channel Temperature
Storage Temperature
Thermal Resistance
(Channel to Case)

10 Volts
-10 Volts
8.4 W
+23 dBm
150°C
-65°C to +150°
15°C/W

1. Exceeding these limits may cause permanent damage.
2. Case Temperature (Tc) = +25°C



Description

M/A-COM's MAAM26100-P1 is a GaAs MMIC two stage high efficiency power amplifier in a high performance bolt down ceramic package. The MAAM26100-P1 is a fully monolithic design for operation in 50-ohm systems, with an on-chip negative bias network which eliminates the need for external bias circuitry.

The MAAM26100-P1 is ideally suited for driver amplifiers and transmitter outputs in Electronic Warfare Jammers, Missile Subsystems and Phased Array Radars.

M/A-COM's MAAM26100-P1 is fabricated using a mature 0.5-micron gate length GaAs process. The process features full passivation for increased performance reliability.




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