Features: ·+30 dBm Saturated Output Power·18 dB Typical Gain·30% Power Added Efficiency·On-Chip Bias Network·DC Decoupled RF Input and Output·High Performance Ceramic Bolt Down PackageSpecifications Parameter Absolute Maximum VDDVGGPower DissipationRF Input PowerChannel TemperatureS...
MAAM26100-P1: Features: ·+30 dBm Saturated Output Power·18 dB Typical Gain·30% Power Added Efficiency·On-Chip Bias Network·DC Decoupled RF Input and Output·High Performance Ceramic Bolt Down PackageSpecifications...
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Features: • Low Distortion• Low Noise Figure• Lead-Free 4 mm 20-Lead PQFN Packag...
Features: • 2-Way Splitter, 8.5 dB Gain• Single Ended Input and Outputs• 75 Imp...
Parameter |
Absolute Maximum |
VDD VGG Power Dissipation RF Input Power Channel Temperature Storage Temperature Thermal Resistance (Channel to Case) |
10 Volts |
M/A-COM's MAAM26100-P1 is a GaAs MMIC two stage high efficiency power amplifier in a high performance bolt down ceramic package. The MAAM26100-P1 is a fully monolithic design for operation in 50-ohm systems, with an on-chip negative bias network which eliminates the need for external bias circuitry.
The MAAM26100-P1 is ideally suited for driver amplifiers and transmitter outputs in Electronic Warfare Jammers, Missile Subsystems and Phased Array Radars.
M/A-COM's MAAM26100-P1 is fabricated using a mature 0.5-micron gate length GaAs process. The process features full passivation for increased performance reliability.