Features: ·1.5mm CMOS-SOS Technology·Latch-up Free·Fast Access Time 70ns Typical·Total Dose 106 Rad(Si)·Transient Upset >1011 Rad(Si)/sec·SEU 4.3 x 10-11 Errors/bitday·Single 5V Supply·Three State Output·Low Standby Current 100mA Typical·-55°C to +125°C Operation·All Inputs and Outputs Fully TT...
MA9264: Features: ·1.5mm CMOS-SOS Technology·Latch-up Free·Fast Access Time 70ns Typical·Total Dose 106 Rad(Si)·Transient Upset >1011 Rad(Si)/sec·SEU 4.3 x 10-11 Errors/bitday·Single 5V Supply·Three Stat...
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Symbol |
Parameter |
Min. |
Max. |
Unit |
VCC |
Supply Voltage |
-0.5 |
7.0 |
V |
VI |
Input Voltage |
-0.3 |
VDD+0.3 |
V |
TA |
Operating Temperature |
-55 |
125 |
°C |
TS |
Storage Temperature |
-65 |
150 |
°C |
The MA9264 64k Static RAM is configured as 8192x8 bits and manufactured using CMOS-SOS high performance, radiation hard, 1.5mm technology.
The design uses a 6 transistor cell and has full static operation with no clock or timing strobe required. Address input buffers are deselected when chip select is in the HIGH state.
See Application Note "Overview of the Dynex Semiconductor Radiation Hard 1.5mm CMOS/SOS SRAM Range".