Features: SBU_f.pub 4-page data sheet3 dB Bandwidth: DC to 3.0 GHz9.0 dB Typical Gain @ 1.0 GHzUnconditionally Stable (k>1)Cost Effective Ceramic Microstrip PackagesTape and Reel Packaging AvailableSpecifications Parameter Ratings Device Current 100 Ma Power Dissipation2, 3 650 mW...
MA4TD0436: Features: SBU_f.pub 4-page data sheet3 dB Bandwidth: DC to 3.0 GHz9.0 dB Typical Gain @ 1.0 GHzUnconditionally Stable (k>1)Cost Effective Ceramic Microstrip PackagesTape and Reel Packaging Availa...
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Parameter | Ratings |
Device Current | 100 Ma |
Power Dissipation2, 3 | 650 mW |
RF Input Power | +13 dBm |
Junction Temperature | 200°C |
Storage Temperature | -65°C to +200°C |
Thermal Resistance: jc=140°C/W |
M/A-COM's MA4TD045 and MA4TD0436 are high performance silicon bipolar MMICs housed in cost effective ceramic microstrip packages. The MA4TD0435 and MA4TD0436 are designed for use where a general purpose 50Ω gain block is desired. Typical applications include narrow and wide band IF and RF amplifiers in industrial and military applications.
The MA4TD0435 and MA4TD0436 are fabricated using a 10 GHz fT silicon bipolar technology that features gold metalization and IC passivation for increased performance and reliability.