MA4TD0436

Features: SBU_f.pub 4-page data sheet3 dB Bandwidth: DC to 3.0 GHz9.0 dB Typical Gain @ 1.0 GHzUnconditionally Stable (k>1)Cost Effective Ceramic Microstrip PackagesTape and Reel Packaging AvailableSpecifications Parameter Ratings Device Current 100 Ma Power Dissipation2, 3 650 mW...

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SeekIC No. : 004407915 Detail

MA4TD0436: Features: SBU_f.pub 4-page data sheet3 dB Bandwidth: DC to 3.0 GHz9.0 dB Typical Gain @ 1.0 GHzUnconditionally Stable (k>1)Cost Effective Ceramic Microstrip PackagesTape and Reel Packaging Availa...

floor Price/Ceiling Price

Part Number:
MA4TD0436
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

SBU_f.pub 4-page data sheet
3 dB Bandwidth: DC to 3.0 GHz
9.0 dB Typical Gain @ 1.0 GHz
Unconditionally Stable (k>1)
Cost Effective Ceramic Microstrip Packages
Tape and Reel Packaging Available



Specifications

Parameter Ratings
Device Current 100 Ma
Power Dissipation2, 3 650 mW
RF Input Power +13 dBm
Junction Temperature 200°C
Storage Temperature -65°C to +200°C
Thermal Resistance: jc=140°C/W



Description

M/A-COM's MA4TD045 and MA4TD0436 are high performance silicon bipolar MMICs housed in cost effective ceramic microstrip packages. The MA4TD0435 and MA4TD0436 are designed for use where a general purpose 50Ω gain block is desired. Typical applications include narrow and wide band IF and RF amplifiers in industrial and military applications.

The MA4TD0435 and MA4TD0436 are fabricated using a 10 GHz fT silicon bipolar technology that features gold metalization and IC passivation for increased performance and reliability.




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