MA4SW410B-1

Package / Case :
Number of Switches : Single
Mounting Style : SMD/SMT
Packaging : Tray
Switch Configuration : SP4T
Insertion Loss : 0.9 dB
Maximum Operating Temperature : + 125 C
Minimum Operating Temperature : - 65 C
Off Isolation (Typ) : 34 dB


Features:

 Broad Bandwith Specified from 2 to 18 GHz
  Integrated D.C. Bias Network
  Exceptional Isolation to Loss Ratio
  Rugged, Fully Monolithic, Glass Encapsulated Construction


Application

These High Performance Switches are suitable for use in Multi-Band ECM, Radar, and Instrumentation Control Circuits where High Isolation to Insertion Loss Ratios are Required. With a Standard +5 V/-5 V, TTL Controlled PIN Diode Driver, 80 nS Switching Speeds are Achieved.

Specifications

Parameter	Value
Operating Temperature	-65 °C to +125 °C
Storage Temperature	65 °C to +150 °C
RF C.W. Incident Power (+/-20 mA)	+ 30 dBm
DC Bias Current	+/-40 mA

Description

The MA4SW410B-1 device is a SP4T Series-Shunt Broad Band Switch with an Integrated Bias Network utilizing M/A-COM's HMICTM (Heterolithic Microwave Integrated Circuit) Process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in a low loss, low dispersion glass. This hybrid combination of Silicon and Glass gives HMIC Switches exceptional low loss and remarkable high isolation through Ku Band frequencies.