MA4ST550

Features: ·High Q· Usable Capacitance Change of 7:1· Low Reverse Leakage for Good Post Tuning Drift Characteristics· Reproducible C-V CurvesApplicationThe MA4ST550 series is appropriate for use in VCOs with frequencies within the range of approximately 1-14 GHz where a large capacitance change is ...

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SeekIC No. : 004407914 Detail

MA4ST550: Features: ·High Q· Usable Capacitance Change of 7:1· Low Reverse Leakage for Good Post Tuning Drift Characteristics· Reproducible C-V CurvesApplicationThe MA4ST550 series is appropriate for use in V...

floor Price/Ceiling Price

Part Number:
MA4ST550
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

·High Q
· Usable Capacitance Change of 7:1
· Low Reverse Leakage for Good Post Tuning Drift Characteristics
· Reproducible C-V Curves



Application

The MA4ST550 series is appropriate for use in VCOs with frequencies within the range of approximately 1-14 GHz where a large capacitance change is required. These diodes are suited for VCOs in missile seekers, telecommunication systems and electronic warfare systems with critical post tuning drift specifications.




Specifications

Parameter Absolute Maximum
Reverse Voltage
Operating Temperature
Storage Temperature
Temperature Coefficient
Same as Breakdown Voltage
- 65°C to +150°C
- 65°C to +200°C
400 ppm/°C at -4 Volts



Description

The MA4ST550 family of high Q Silicon Hyperabrupt Tuning Varactors is available in a series of low parasitic capacitance microwave packages or in chip form. The MA4ST550 series of diodes is available with junction capacitances of approximately 0.8 pF to 8.2 pF at -4 volts. These diodes have capacitance change ratios as high as 7:1.




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