Features: ·Low Cost·Very High Capacitance Ratio from 1 to 8 Volts·Surface Mount Package·High Quality Factor·Useful for Battery Applications·SPC Monitored Ion Implantation for Excellent C-V Repeatability·Singles and Common Cathode Pairs·Available in Tape and ReelApplicationThe MA4ST079 through MA4S...
MA4ST079: Features: ·Low Cost·Very High Capacitance Ratio from 1 to 8 Volts·Surface Mount Package·High Quality Factor·Useful for Battery Applications·SPC Monitored Ion Implantation for Excellent C-V Repeatabi...
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The MA4ST079 through MA4ST083 series of hyperabrupt junction tuning varactors is suggested for usage where a large frequency change is required with only a small change in tuning voltage. This series is appropriate for usage in wide band voltage controlled oscillators and voltage controlled filters which require the largest rate of change of capacitance with voltage.
The large change in capacitance from 1 to 8 volts makes them very attractive for battery operated or other systems with limited available control voltage.
The MA4ST079 through MA4ST083 family can be used in VCOs and VTFs from approximately 100 KHz through the UHF frequency band.
Parameter | Absolute Maximum |
Reverse Voltage Junction Temperature Storage Temperature Forward Current Power Dissipation |
12 Volts -65°C to +125°C -65°C to +125°C 50 mA 50 mW @ 25°C |
The MA4ST079 through MA4ST083 series of silicon hyperabrupt junction tuning varactors is produced with ion implantation and advanced epitaxial growth techniques. These diodes have thermal oxide passivation, and feature very high capacitance ratio and quality factor. They are well suited for use from the sub-HF through UHF frequency range. The standard capacitance tolerance is ±10%, with tighter tolerances available. Capacitance matching at one or more bias voltages is also available.