MA4SPS302

These devices can be used in series and shunt switches for wireless circuits where smaller area and profile are required. Low parasitic values of L and C make additional circuit tuning unnecessary. 2 RS value @ 1 mA makes the devices suitable for smaller current consumption applications. W

M/A-COM's MA4SPS302 is a silicon-glass PIN diode fabricated with M/A-COM's patented HMIC™ process. This device features two silicon pedestals embedded in a low loss glass. The diode is formed on the top of one pedestal and connections to the backside of the device are facilitated by making the pedestal side walls conductive. Selective backside metalization is applied producing a surface mount device. The topside is fully encapsulated with silicon nitride and has an additional polymer layer for scratch protection. These protective coatings prevent damage to the junction and the anode air-bridge during handling and assembly.