MA4EXP950H1-1277T

Operating Temperature ......-40 °C to +85 °C
Storage Temperature .......-65 °C to +150 °C
Incident LO Power..................... +20 dBm C.W.
Incident RF Power ......................+20 dBm C.W.
Soldering Temperature .....................+260 °C
1. Exceeding these limits may cause permanent damage.
* Please refer to application note M538 for surface mounting instructions.

monolithic 850-1050 MHz, high barrier, double balanced mixer in a low cost, miniature surface mount FQFP-N 3mm Square, 16 lead plastic package. The die uses M/A-COM's unique HMIC silicon/glass process to realize low loss passive elements while retaining the advantages of high barrier silicon schottky barrier diodes to produce a compact device.

These mixers of MA4EXP950H1-1277T are well suited for GSM and CDMA cellular basestation infrastructure applications where small size and high performance is required.Typical applications include frequency conversion,modulation, and demodulation in wireless receivers and transmitters.