MA4E2099-1284

Features: · Designed for High Dynamic Range Applications· Low Parasitic Capitance and Inductance· Low Parasitic Resistance· Recommended for DC-12GHz·Uniform Electrical Characteristics with Each Junction· Rugged HMIC Construction with Polyimide Scratch ProtectionApplicationThe devices can be used i...

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MA4E2099-1284 Picture
SeekIC No. : 004407865 Detail

MA4E2099-1284: Features: · Designed for High Dynamic Range Applications· Low Parasitic Capitance and Inductance· Low Parasitic Resistance· Recommended for DC-12GHz·Uniform Electrical Characteristics with Each Junc...

floor Price/Ceiling Price

Part Number:
MA4E2099-1284
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/11/27

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Product Details

Description



Features:

· Designed for High Dynamic Range Applications
· Low Parasitic Capitance and Inductance
· Low Parasitic Resistance
· Recommended for DC-12GHz
·Uniform Electrical Characteristics with Each Junction
· Rugged HMIC Construction with Polyimide Scratch Protection



Application

The devices can be used in higher power mixer, detector, and limiter circuits through 12 GHz.


Specifications

Operating Temperature            -55 °C to +150 °C
Storage Temperature               -55 °C to +150 °C
Forward Current                                           20 mA
Reverse Voltage                                           l -9 V l
RF C.W. Incident Power                           + 25 dBm
RF & DC Dissipated Power                         100 mW



Description

The MA4E2099-1284 Bridge Octoquad is offered for high dynamic range applications. This device is constructed with Silicon High Barrier Schottky Diodes fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process to ensure electrical characteristics uniformity for each junction. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass dielectric, which acts as the low dispersion, low loss, microstrip transmission medium. The combination of silicon and glass allows HMIC devices to have excellent loss and power dissipation characteristics in a low profile, reliable device.




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