MA4DP918-1277

Features: HMICTM Integrated Passive Circuit Low Insertion Loss, High Rejection Diplexer Suface Mountable in Microwave Circuits, No Wirebonds Required Rugged HMICTM Construction with Polyamide Encapsulation Reliable, Multilayer Metalization No External 50 W Matching RequiredLow Cost Miniature Plas...

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SeekIC No. : 004407859 Detail

MA4DP918-1277: Features: HMICTM Integrated Passive Circuit Low Insertion Loss, High Rejection Diplexer Suface Mountable in Microwave Circuits, No Wirebonds Required Rugged HMICTM Construction with Polyamide Encap...

floor Price/Ceiling Price

Part Number:
MA4DP918-1277
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/11/27

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Product Details

Description



Features:

HMICTM Integrated Passive Circuit
Low Insertion Loss, High Rejection Diplexer
Suface Mountable in Microwave Circuits, No Wirebonds Required
Rugged HMICTM Construction with Polyamide Encapsulation
Reliable, Multilayer Metalization
No External 50 W Matching Required
 Low Cost Miniature Plastic MLP Package



Application

The MA4DP918-1277 HMICTM Integrated Passive Diplexer is recommended for use in wireless dual band GSM/DCS orAMPS/PCS applications. The diplexer has low insertion loss in the pass bands and high rejection in the stop bands. All ports are matched to 50 ohms.




Specifications

Parameter
Value
Operating Temperature
-65 °C to +125 °C
Storage Temperature
-65 °C to +150 °C
RF C.W. Incident Power
3 Watts C.W.



Description

The MA4DP918-1277 HMICTM Integrated Passive Diplexer is fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. The MA4DP918-1277 consists of multilayer conductors on a glass dielectric, which acts as the low dispersion, low loss microstrip transmission medium. The glass allows HMIC devices to have excellent Q characteristics in a low profile, reliable device. Conductors are printed with state-of-the-art semiconductor photolithography processes and encapsulated in rugged siliconnitride and BCB polyamide. The circuit is composed of plated inductors and metal-insulator-metal (MIM) capacitors employing a silicon nitride dielectric layer. The high performance 3 mm MLP package allows for surface mount placement with no additional circuit matching required.




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