Features: HMICTM Integrated Passive Circuit Low Insertion Loss, High Rejection Diplexer Suface Mountable in Microwave Circuits, No Wirebonds Required Rugged HMICTM Construction with Polyamide Encapsulation Reliable, Multilayer Metalization No External 50 W Matching RequiredLow Cost Miniature Plas...
MA4DP918-1277: Features: HMICTM Integrated Passive Circuit Low Insertion Loss, High Rejection Diplexer Suface Mountable in Microwave Circuits, No Wirebonds Required Rugged HMICTM Construction with Polyamide Encap...
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The MA4DP918-1277 HMICTM Integrated Passive Diplexer is recommended for use in wireless dual band GSM/DCS orAMPS/PCS applications. The diplexer has low insertion loss in the pass bands and high rejection in the stop bands. All ports are matched to 50 ohms.
Parameter |
Value |
Operating Temperature |
-65 °C to +125 °C |
Storage Temperature |
-65 °C to +150 °C |
RF C.W. Incident Power |
3 Watts C.W. |
The MA4DP918-1277 HMICTM Integrated Passive Diplexer is fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. The MA4DP918-1277 consists of multilayer conductors on a glass dielectric, which acts as the low dispersion, low loss microstrip transmission medium. The glass allows HMIC devices to have excellent Q characteristics in a low profile, reliable device. Conductors are printed with state-of-the-art semiconductor photolithography processes and encapsulated in rugged siliconnitride and BCB polyamide. The circuit is composed of plated inductors and metal-insulator-metal (MIM) capacitors employing a silicon nitride dielectric layer. The high performance 3 mm MLP package allows for surface mount placement with no additional circuit matching required.