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MA28-2

Features: • LOW NOISE: 3.5 dB (TYP.)• HIGH EFFICIENCY: 27 mA (TYP.) @ +5 Vdc• GOOD DYNAMIC RANGE: 105 dB (TYP.)• LOW VSWR: <1.4:1 (TYP.)Specifications Parameter Absolute Maximum Storage Temperature -62 to +125 Case Temperature +125 DC Voltage ...

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SeekIC No. : 004407515 Detail

MA28-2: Features: • LOW NOISE: 3.5 dB (TYP.)• HIGH EFFICIENCY: 27 mA (TYP.) @ +5 Vdc• GOOD DYNAMIC RANGE: 105 dB (TYP.)• LOW VSWR: <1.4:1 (TYP.)Specifications Parameter ...

MA28-2 Data Sheet

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Part Number:
MA28-2
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

• LOW NOISE: 3.5 dB (TYP.)
• HIGH EFFICIENCY: 27 mA (TYP.) @ +5 Vdc
• GOOD DYNAMIC RANGE: 105 dB (TYP.)
• LOW VSWR: <1.4:1 (TYP.)


Specifications

Parameter
Absolute Maximum
Storage Temperature
-62 to +125
Case Temperature
+125
DC Voltage
+8 V
Continuous Input Power
50 mW
Peak Power (3 Fsec max.)
0.5 W
"S" Series Burn-In Temperature (case)
+125
Input Voltage
VI



Description

The A28-2 RF amplifier is a discrete thin film hybrid design, which incorporates the use of thin film manufacturing processes for accurate performance and high reliability.

This single stage bipolar transistor feedback amplifier design displays impressive performance over a broadband frequency range. An active DC biasing network is used for temperaturestable
performance, in addition to an RF Choke, used for power supply decoupling.

Both TO-8 and Surface Mount packages are hermetically sealed, and MIL-STD-883 environmental screening is available.




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