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MA1916

Features: · Radiation Hard CMOS-SOS Technology· Low Power Consumption· Latch-up Free· High SEU Immunity· CCSDS Standard RS (255, 223)· Selectable Interleave Depths of 1, 4 or 5· 5MBit/sec Input Data RateSpecifications Symbol Parameter Conditions Min Typ Max Units VDD Supply Voltage ...

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SeekIC No. : 004407451 Detail

MA1916: Features: · Radiation Hard CMOS-SOS Technology· Low Power Consumption· Latch-up Free· High SEU Immunity· CCSDS Standard RS (255, 223)· Selectable Interleave Depths of 1, 4 or 5· 5MBit/sec Input Data...

MA1916 Data Sheet

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Part Number:
MA1916
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

· Radiation Hard CMOS-SOS Technology
· Low Power Consumption
· Latch-up Free
· High SEU Immunity
· CCSDS Standard RS (255, 223)
· Selectable Interleave Depths of 1, 4 or 5
· 5MBit/sec Input Data Rate






Specifications

Symbol Parameter Conditions Min Typ Max Units
VDD Supply Voltage 4.5 5.0 5.5 V
VIH CMOS Input High Voltage VDD = 5.5V 0.8 VDD VDD V
VIL CMOS Input Low Voltage VDD = 5.5V VSS 0.2 VDD V
VOH CMOS Output High Voltage VDD = 5V, IOH = -1.0mA VDD-0.5 V
VOL CMOS Output Low Voltage VDD = 5V, IOL = 4.0mA 0.4 V
IIL Input Leakage Current VDD = 5.5V, VIN = VSS or VDD -10 10 A
IPDL Input Pull-Down Current VDD = 5.5V, VIN = VSS or VDD -20 150 A
IDD1 Static Power Supply Current VDD = 5.5V 0.1 2.5 mA
IDD2 Dynamic Power Supply Current CLK = 10MHz, VDD = 5.5V 3 10 mA

Notes: 1. VDD = 5V±10%, over full operating temperature range. 2. Total dose radiation not exceeding 1x105 Rad (Si) 3. Mil-Std-883, method 5005, subgroups 1, 2, 3




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