Features: `Specified +25/+10 Volt Chracteristics` RF Output Power : +43 dBm (typ.)` Harmonics : 65 dBc typ.`Small Size : 77 *148 *40 mm3`50 Ohm Input/Output ImpedancesApplication·PCS (1930 ~ 1990 MHz)Base stationSpecifications No. Items Symbol Condition Standard Unit 1 Case temperatu...
MA1113-1: Features: `Specified +25/+10 Volt Chracteristics` RF Output Power : +43 dBm (typ.)` Harmonics : 65 dBc typ.`Small Size : 77 *148 *40 mm3`50 Ohm Input/Output ImpedancesApplication·PCS (1930 ~ 1990 MH...
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`Specified +25/+10 Volt Chracteristics
` RF Output Power : +43 dBm (typ.)
` Harmonics : 65 dBc typ.
`Small Size : 77 *148 *40 mm3
`50 Ohm Input/Output Impedances
No. | Items | Symbol | Condition | Standard | Unit |
1 | Case temperature | TC | 40 ~ +70 | ||
2 | Storage temperature | Tstg | 40 ~ +80 | ||
3 | Collector Voltage | VC | +26.0 | V | |
4 | Drain Voltage | Vd | Vg = 6V | +11.5 | V |
5 | Gate Voltage | Vg | Vd = +10V | 10.0 | V |
6 | RF Input Power | Pin | 9.0 | dBm |
The MA1113-1 is a 20W power amplifierdesigned for PCS, which comprises 4 stages GaAs FET and 2 stages Si bipolar transistors, also RF power onitoring circuit.