Features: • Broadband Performance• 32% Typical Power Added Efficiency• 50 Input/Output Impedance• Self-Aligned MSAG® MESFET ProcessSpecifications Rating Symbol Value Unit DC Drain Supply Voltage VDD 12 Vdc DC Gate Supply Voltage VGG -6 Vdc RF Inp...
MA08509D: Features: • Broadband Performance• 32% Typical Power Added Efficiency• 50 Input/Output Impedance• Self-Aligned MSAG® MESFET ProcessSpecifications Rating Symbol Va...
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• Broadband Performance
• 32% Typical Power Added Efficiency
• 50 Input/Output Impedance
• Self-Aligned MSAG® MESFET Process
Rating | Symbol | Value | Unit |
DC Drain Supply Voltage | VDD | 12 | Vdc |
DC Gate Supply Voltage | VGG | -6 | Vdc |
RF Input Power | PIN | 500 | dBm |
Junction Temperature | TJ | 150 | |
Storage Temperature Range | TSTG | -40 to +85 |
The MA08509D is a three stage MMIC power amplifier fabricated using M/A-COM's mature GaAs Self-Aligned MSAG® MESFET Process. This product is fully matched to 50 ohms on both the input and the output.