Features: ` 20 dB Gain dramatically increases range of your low power Bluetooth devices` Single 3.0V positive supply operates over a wide range of supply voltages` Extremely small size 6 pin SOT plastic package - 3 mm x 1.75 mm body size` Output power easily controllable via VDD1` 45% Power Add...
MA02305AK: Features: ` 20 dB Gain dramatically increases range of your low power Bluetooth devices` Single 3.0V positive supply operates over a wide range of supply voltages` Extremely small size 6 pin SOT ...
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` 20 dB Gain dramatically increases range of your low power Bluetooth devices
` Single 3.0V positive supply operates over a wide range of supply voltages
` Extremely small size 6 pin SOT plastic package - 3 mm x 1.75 mm body size
` Output power easily controllable via VDD1
` 45% Power Added Efficiency
` 100% Duty Cycle
` 2000 to 2900 MHz Operation
` Self-Aligned MSAG®-Lite MESFET Process
Rating | Symbol | Value | Unit |
DC Supply Voltage (Pins 1, 12, 16) | VDD | 5.5 | Vdc |
RF Input Power | PIN | 10 | mW |
Junction Temperature | TJ | 150 | |
Storage Temperature Range | TSTG | -40 to +150 |
The MA02305AK is an RF power amplifier based on M/ACOM's Self-Aligned MSAG® MESFET Process. This product is designed for use in 2.4 GHz ISM products as a booster for high power Bluetooth devices. Output power can be controlled to meet Bluetooth requirements via varying input power or the voltage on VDD1.