Features: • Single Positive Supply • 57% Power Added Efficiency • Operation down to 1.2 V • 100% Duty Cycle • 1800 to 2000 MHz Operation • 8 Pin Full Downset MSOP Plastic Package • Accommodates Battery Charging Conditions up to 5.6 Volts • Self-Align...
MA02206GJ: Features: • Single Positive Supply • 57% Power Added Efficiency • Operation down to 1.2 V • 100% Duty Cycle • 1800 to 2000 MHz Operation • 8 Pin Full Downset MSOP...
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• Single Positive Supply
• 57% Power Added Efficiency
• Operation down to 1.2 V
• 100% Duty Cycle
• 1800 to 2000 MHz Operation
• 8 Pin Full Downset MSOP Plastic Package
• Accommodates Battery Charging Conditions up to 5.6 Volts
• Self-Aligned MSAG® -Lite MESFET Process
Rating | Symbol | Value | Unit |
DC Supply Voltage | VDD | 6.0 | V |
RF Input Power | PIN | 10 | mW |
Junction Temperature | TJ | 150 | |
Storage Temperature Range | TSTG | -40 to +150 | |
Operating Temperature Range |
TOPER | -40 to +100 | |
Moisture Sensitivity | JEDEC Level 1 |
The MA02206GJ is a DECT Power amplifier based on M/A-COM's Self-Aligned MSAG MESFET Process. This product is designed for use in 3.6 V DECT handsets and base stations.