M93S66,

`Industry Standard MICROWIRE Bus
`Single Supply Voltage:
4.5V to 5.5V for M93Sx6
2.5V to 5.5V for M93Sx6-W
1.8V to 5.5V for M93Sx6-R
`Single Organization: by Word (x16)
`Programming Instructions that work on: Word or Entire Memory
`Self-timed Programming Cycle with Auto-Erase
`User Defined Write Protected Area
`Page Write Mode (4 words)
`Ready/Busy Signal During Programming
`Speed:
1MHz Clock Rate, 10ms Write Time (Current product, identified by process identification letter F or M)
2MHz Clock Rate, 5ms Write Time (New Product, identified by process identification letter W)
`Sequential Read Operation
`Enhanced ESD/Latch-Up Behavior
`More than 1 Million Erase/Write Cycles
`More than 40 Year Data Retention

This specification covers a range of 4K, 2K, 1K bit serial Electrically Erasable Programmable Memo-ry (EEPROM) products (respectively for M93S66,M93S56, M93S46). In this text, these products are collectively referred to as M93Sx6.