M72DW64000B

` MULTIPLE MEMORY PRODUCT
64Mbit (8M x8 or 4M x16), Multiple Bank, Page, Boot Block, Flash Memory
16Mbit (1M x 16) Pseudo Static RAM
` SUPPLY VOLTAGE
V_CCF = V_CCP = 2.7 to 3.3V
V_PPF = 12V for Fast Program (optional)
` ACCESS TIME: 70, 90ns
` LOW POWER CONSUMPTION
` ELECTRONIC SIGNATURE
Manufacturer Code: 0020h
Device Code: 227Eh + 2202h + 2201h FLASH MEMORY
` ASYNCHRONOUS PAGE READ MODE
Page Width: 4 Words
Page Access: 25, 30ns
` PROGRAMMING TIME
10µs per Byte/Word typical
4 Words/ 8 Bytes at-a-time Program
` MEMORY BLOCKS
Quadruple Bank Memory Array: 8Mbits + 24Mbits + 24Mbits + 8Mbits
Parameter Blocks (at both Top and Bottom)
` DUAL OPERATIONS
While Program or Erase in a group of banks (from 1 to 3), Read in any of the other banks
` PROGRAM/ERASE SUSPEND and RESUME MODES
Read from any Block during Program Suspend
Read and Program another Block during Erase Suspend
` UNLOCK BYPASS PROGRAM COMMAND
Faster Production/Batch Programming
` V_PP/WP PIN for FAST PROGRAM and WRITE PROTECT
` TEMPORARY BLOCK UNPROTECTION MODE
` COMMON FLASH INTERFACE
64 bit Security Code
` EXTENDED MEMORY BLOCK
Extra block used as security block or to store additional information
` 100,000 PROGRAM/ERASE CYCLES per BLOCK

The M72DW64000B is a low voltage Multiple Memory Product which combines two memory devices; a 64 Mbit Multiple Bank, Boot Block Flash memory (M29DW640D) and a 16 Mbit Pseudo SRAM. This document should be read in  onjunction with the M29DW640D and M69AW024B datasheets.

Recommended operating conditions do not allow more than one of the internal memory devices to be active at the same time.

The memory is offered in an LFBGA73 (8 x 11.6mm, 0.8 mm pitch) package and is supplied with all the bits erased (set to '1').