M6MGB

·Access time Flash Memory 90ns (Max.)
·SRAM 85ns (Max.)   Supply voltage Vcc=2.7 ~ 3.6V
·Ambient temperature I version Ta=-40 ~ 85°C
·Package : 72-pin S-CSP , 0.8mm ball pitch

1) Minimum DC voltage is -0.5V on input/output pins. During transitions, this level may undershoot to -2.0V for  eriods <20ns. Maximum DC voltage on input/output pins is (F-VCC)+0.5V which, during transitions, may overshoot to (F-VCC)+1.5V for periods <20ns.

The MITSUBISHI M6MGB/T166S4BWG is a Stacked Chip Scale Package (S-CSP) that contents 16M-bits flash memory and 4M-bits Static RAM in a 72-pin S-CSP.

16M-bits Flash memory is a 1,048,576 words, 3.3V-only, and high performance non-volatile memory fabricated by
CMOS technology for the peripheral circuit and DINOR(DIvided bit-line NOR) architecture for the memory cell.

4M-bits SRAM is a 262,144words unsynchronous SRAM fabricated by silicon-gate CMOS technology.

M6MGB/T166S4BWG is suitable for the application of the mobile-communication-system to reduce both the mount
space and weight .