M69AW024BE

Features: SUPPLY VOLTAGE: 2.7 to 3.3V ACCESS TIME: 60ns LOW STANDBY CURRENT: 70A DEEP POWER DOWN CURRENT: 10A COMPATIBLE WITH STANDARD LPSRAM TFBGA48 PACKAGE RoHS COMPLIANT (directive 2002/95/EC of the European Parliament)Specifications Symbol Parameter Min Max Unit IO ...

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SeekIC No. : 004407033 Detail

M69AW024BE: Features: SUPPLY VOLTAGE: 2.7 to 3.3V ACCESS TIME: 60ns LOW STANDBY CURRENT: 70A DEEP POWER DOWN CURRENT: 10A COMPATIBLE WITH STANDARD LPSRAM TFBGA48 PACKAGE RoHS COMPLIANT (directive 2002/95/EC of...

floor Price/Ceiling Price

Part Number:
M69AW024BE
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/17

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Product Details

Description



Features:

SUPPLY VOLTAGE: 2.7 to 3.3V
ACCESS TIME: 60ns
LOW STANDBY CURRENT: 70A
DEEP POWER DOWN CURRENT: 10A
COMPATIBLE WITH STANDARD LPSRAM
TFBGA48 PACKAGE RoHS COMPLIANT (directive 2002/95/EC of the European Parliament)



Specifications

Symbol
Parameter
Min
Max
Unit
IO
Output Current
-50
50
mA
TA
Ambient Operating Temperature
-30
85
°C
TLEAD
Lead Temperature During Soldering
(1)
°C
TSTG
Storage Temperature
-55
125
°C
VCC
Core Supply Voltage
-0.5
3.6
V
VIO
Input or Output Voltage
-0.5
3.6
V
Note: 1. Compliant with the JEDEC Std J-STD-020B (for small body, Sn-Pb or Pb assembly), and the European directive on Restrictions on Hazardous Substances (RoHS) 2002/95/EU.


Description

The M69AW024BE is a 16 Mbit (16,777,216 bit) CMOS memory, organized as 1,024,576 words by 16 bits, and is supplied by a single 2.7V to 3.3V supply voltage range.

M69AW024BE is a member of STMicroelectronics PSRAM memory family, based on the one-transistor per-cell architecture. These devices are manufactured using dynamic random access memory cells, to minimize the cell size, and maximize the amount of memory that can be implemented in a given area.

However, through the use of internal control logic,the device is fully static in its operation, requiring no external clocks or timing strobes, and has a standard Asynchronous SRAM Interface.The internal control logic of the M69AW024BE handles the periodic refresh cycle, automatically, and without user involvement.

Write cycles can be performed on a single byte by using Upper Byte Enable (UB) and Lower Byte Enable (LB).

The M69AW024BE can be put into standby mode using Chip Enable (E1) or in deep power down mode by using Chip Enable (E2).

Power-Down mode achieves a very low current consumption by halting all the internal activities.Since the refresh circuitry is halted, the duration of the power-down should be less than the maximum period for refresh, if the user has not finished with the data contents of the memory.




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