M68AR024D

Features:

SUPPLY VOLTAGE: 1.65 to 1.95V
I/O SUPPLY VOLTAGE: 1.5 to 1.95V
1M WORDS x 16 bits LOW POWER SRAM
EQUAL CYCLE and ACCESS TIME: 70ns
LOW V_CC  DATA RETENTION: 1.0V
LOW STANDBY CURRENT
TRI-STATE COMMON I/O
SINGLE BYTE READ/WRITE
AUTOMATIC POWER DOWN


Specifications

Symbol	Parameter	Value	Unit
IO(1)	Output Current	20	mA
PD	Power Dissipation	1	W
TA	Ambient Operating Temperature	-55 to 12
TSTG	Storage Temperature	-65 to 150
VCC	Supply Voltage	-0.5 to 2.5	V
VCCQ	I/O Supply Voltage	-0.5 to 2.	V
VIO(2)	Input or Output Voltage	-0.5 to VCCQ +0.5	V

Description

The M68AR024D is a 16 Mbit (16,777,216 bit) Low Power SRAM fabricated in STMicroelectronics ad-vanced CMOS technology, organized as 1,048,576 words by 16 bits. The device exhibits fully static op-eration requiring no external clocks or timing strobes.

M68AR024D needs 1.65 to 1.95V supply voltage. By using theV_CCQ pin all the outputs can be powered indepen-dently from the core supply voltage allowing to drive the I/O pins down to 1.5V. V_CCQpin can be tied to Vcc if the  feature is not required.

This device has a standard Asynchronous SRAM Interface. Read and Write cycles can be per-formed on a single byte by using UB/LB signals.

M68AR024D can be put into standby mode by usingE1/E2 pins. The same pins can be used to case cade more devices in order to achieve deep mem-ory expansion.

Standby mode allows a low current consumption, up to 99%, by reducing internal activities.

The M68AR024D is available in TFBGA48 (0.75mm pitch) package with industrial standard foot-print.