M67204H

Supply Voltage (VCC - GND):.....................................- 0.5V to 7.0V
Input or Output Voltage Applied:........ (GND - 0.3V) to (Vcc + 0.3V)
Storage Temperature: .................................. - 65 °C to + 150 °C

*NOTICE: Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

The M67204H implements a first-in first-out algorithm, featuring asynchronous read/write operations. The FULL and EMPTY flags prevent data overflow and underflow. The expansion logic allows unlimited expansion in word size and depth with no timing penalties. Twin address pointers automatically generate internal read and write addresses, and no external address information is required for the Atmel FIFOs. address pointers are automatically incremented with the write pin and read pin. The 9 bits wide data are used in data communications applications where a parity bit for error checking is necessary. The retransmit pin reset the read pointer to zero without affecting the write pointer. This is very useful for retransmitting data when an error is detected in the system.

Using an array of eight transistors (8T) memory cell, the M67204H combines an extremely low standby supply current (typ = 0.1 A) with a fast access time at 15 ns over the full temperature range. All versions offer battery backup data retention capability with a typical power consumption at less than 2 W.

The M67204H is processed according to the methods of the latest revision of the MIL PRF 38535 (Q and V) or ESA SCC 9000.