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M66281FP

Features: • Memory configuration 5120 words x 8 bits x 2 (dynamic memory)• High speed cycle 25 ns (Min.)• High speed access 18 ns (Max.)• Output hold 3 ns (Min.)• Reading and writing operations can be completely carried out independently and asynchronously.• Var...

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M66281FP: Features: • Memory configuration 5120 words x 8 bits x 2 (dynamic memory)• High speed cycle 25 ns (Min.)• High speed access 18 ns (Max.)• Output hold 3 ns (Min.)• Readi...

M66281FP Data Sheet

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Part Number:
M66281FP
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

• Memory configuration 5120 words x 8 bits x 2 (dynamic memory)
• High speed cycle        25 ns (Min.)
• High speed access     18 ns (Max.)
• Output hold                3 ns (Min.)
• Reading and writing operations can be completely carried out independently and asynchronously.
• Variable length delay bit
• Input/output               TTL direct connection allowable
• Output                        3 states
• Q00 Q07 1 line delay
• Q10 Q17 2 line delay


Application

Digital copying machine, laser beam printer, high speed facsimile,etc.


Pinout

Connection Diagram


Specifications

Symbol
Parameter
Conditions
Rating
Unit
Vcc Supply voltage
 Value based on the GND pin
-0.3to+4.6
V
VI Input voltage
0.3 toVcc+0.3
V
Vo Output voltage
0.3 toVcc+0.3
V
Pd Power dissipation Note
540
mW
Tstg Storage temperature  
-55 to +150
°C
Note : Ta=0 63°C. Ta > 63°C are derated at -9mW/°C


Description

The M66281FP is high speed line memory that uses high performance silicon gate CMOS process technology and adopts the FIFO (First In First Out) structure consisting of 5120 words x 8 bits x 2.

Since memory is available to simultaneously output 1 line delay and 2 line delay data, the M66281FP is optimal for the compensation of data of multiple lines.




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