Features: • Memory configuration 8192 words x 8 bits configuration• High speed cycle 20 ns (Min.)• High speed access 16 ns (Max.)• Output hold 3 ns (Min.)• Reading and writing operations can be completely carried out independently and asynchronously.• Variable l...
M66258FP: Features: • Memory configuration 8192 words x 8 bits configuration• High speed cycle 20 ns (Min.)• High speed access 16 ns (Max.)• Output hold 3 ns (Min.)• Reading and ...
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Symbol |
Parameter |
Conditions |
Ratings |
Unit |
Vcc | Supply voltage |
Value based on the GND pin |
-0.5to+6.0 |
V |
VI | Input voltage |
-0.5toVcc+0.5 |
V | |
Vo | Output voltage |
-0.5toVcc+0.5 |
V | |
Pd | Power dissipation | Ta=25 °C |
825 |
mW |
Tstg | Storage temperature |
-65 to +150 |
°C |
The M66258FP is high speed line memory that uses high performance silicon gate CMOS process technology and adopts the FIFO (First In First Out) structure consisting of 8192 words x 8 bits.
The M66258FP, performing reading and writing operations at different cycles independently and asynchronously, is optimal for buffer memory to be used between equipment of different data processing speeds.