Features: • Memory configuration ..................................................................................... 5120 words× 8-bits (dynamic memory)• High-speed cycle ............................................. 25ns (Min.)• High-speed access .................................
M66256FP: Features: • Memory configuration ..................................................................................... 5120 words× 8-bits (dynamic memory)• High-speed cycle ................
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• Memory configuration ........................................................
............................. 5120 words× 8-bits (dynamic memory)
• High-speed cycle ............................................. 25ns (Min.)
• High-speed access ......................................... 18ns (Max.)
• Output hold ........................................................ 3ns (Min.)
• Fully independent, asynchronous write and read operations
• Variable length delay bit
• Output .................................................................... 3 states
Symbol |
Parameter |
Conditions |
Rating |
Unit |
Vcc | Supply voltage |
A value based on GND pin |
-0.5to+7.0 |
V |
VI | Input voltage |
0.5 toVcc+0.5 |
V | |
Vo | Output voltage |
0.5 toVcc+0.5 |
V | |
Pd | Maximum power dissipation | Ta = 25°C |
440 |
mW |
Tstg | Storage temperature |
-65 to +150 |
°C |
The M66256FP is a high-speed line memory with a FIFO(First In First Out) structure of 5120-word ×8-bit configuration
which uses high-performance silicon gate CMOS process technology.
The M66256FP has separate clock, enable and reset signals for write and read, and is most suitable as a buffer memory between devices with different data processing throughput.