Features: • Memory configuration of 8192 words×10 bits (dynamic memory)• High-speed cycle ............................................. 30ns (Min.)• High-speed access ......................................... 25ns (Max.)• Output hold ...........................................
M66255FP: Features: • Memory configuration of 8192 words×10 bits (dynamic memory)• High-speed cycle ............................................. 30ns (Min.)• High-speed access ................
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Symbol |
Parameter |
Conditions |
Ratings |
Unit |
Vcc | Supply voltage |
A value based on GND pin |
-0.5to+7.0 |
V |
VI | Input voltage |
-0.5toVcc+0.5 |
V | |
Vo | Output voltage |
-0.5toVcc+0.5 |
V | |
Pd | Power dissipation | Ta=25 °C |
825(Note 1) |
mW |
Tstg | Storage temperature |
-65 to +150 |
°C |
The M66255FP is a high-speed line memory with a FIFO(First In First Out) structure of 8192-word ×10-bit configuration which uses high-performance silicon gate CMOS process technology.
The M66255FP has separate clock, enable and reset signals for write and read, and is most suitable as a buffer memory between devices with different data processing throughput.