Features: `Three package configurations (P, FP and GP)`Pin connection Compatible with M54526P and M54526FP`High breakdown voltage (BVCEO 50V)`High-current driving (IC(max) = 500mA)`With clamping diodes`Driving available with PMOS IC output of 8-18V`Wide operating temperature range (Ta = 40 to +85°...
M63826GP: Features: `Three package configurations (P, FP and GP)`Pin connection Compatible with M54526P and M54526FP`High breakdown voltage (BVCEO 50V)`High-current driving (IC(max) = 500mA)`With clamping dio...
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Symbol |
Parameter |
Conditions |
Ratings |
Unit | |
VCEO IC VI IF VR Pd Topr Tstg |
Collector-emitter voltage Collector current Input voltage Clamping diode forward current Clamping diode reverse voltage Power dissipation Operating temperature Storage temperature |
Output, H Current per circuit output, L Ta = 25°C, when mounted on board |
0.5 ~ +50 500 0.5 ~ +30 500 50 1.47(P)/1.00(FP)/0.80(GP) 40 ~ +85 55 ~ +125 |
V mA V mA V W °C °C |
M63826P, M63826FP and M63826GP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semi-conductor integrated circuits perform high-current driving with extremely low input-current supply.
Production lineup has been newly expanded with the addition of 225mil (GP) package.
M63826P and M63826FP have the same pin connection as M54526P and M54526FP. (Compatible with M54526P and M54526FP) More over, the features of M63826P and M63826FP are equal or superior to those of M54526P and M54526FP.