Features: `Three package configurations (P, FP and GP)`Pin connection Compatible with M54523P and M54523FP`High breakdown voltage (BVCEO 50V)`High-current driving (IC(max) = 500mA)`With clamping diodes`PMOS Compatible input`Wide operating temperature range (Ta = 40 to +85°C)ApplicationDrives of re...
M63823GP: Features: `Three package configurations (P, FP and GP)`Pin connection Compatible with M54523P and M54523FP`High breakdown voltage (BVCEO 50V)`High-current driving (IC(max) = 500mA)`With clamping dio...
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Symbol |
Parameter |
Conditions |
Ratings |
Unit | |
VCEO IC VI IF VR Pd Topr Tstg |
Collector-emitter voltage Collector current Input voltage Clamping diode forward current Clamping diode reverse voltage Power dissipation Operating temperature Storage temperature |
Output, H Current per circuit output, L Ta = 25°C, when mounted on board |
0.5 ~ +50 500 0.5 ~ +30 500 50 1.47(P)/1.00(FP)/0.80(GP) 40 ~ +85 55 ~ +125 |
V mA V mA V W °C °C |
M63823P, M63823FP and M63823GP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semi-conductor integrated circuits perform high-current driving with extremely low input-current supply.
Production lineup has been newly expanded with the addition of 225mil (GP) package.
M63823P and M63823FP have the same pin connection as M54523P and M54523FP. (Compatible with M54523P and M54523FP) More over, the features of M63823P and M63823FP are equal or superior to those of M54523P and M54523FP.