Features: `Four package configurations (P, FP, GP and KP)`Medium breakdown voltage (BVCEO 35V)`Synchronizing current (IC(max) = 300mA)`With clamping diodes`Low output saturation voltage`Wide operating temperature range (Ta = 40 to +85°C)ApplicationDriving of digit drives of indication elements (LE...
M63814KP: Features: `Four package configurations (P, FP, GP and KP)`Medium breakdown voltage (BVCEO 35V)`Synchronizing current (IC(max) = 300mA)`With clamping diodes`Low output saturation voltage`Wide operati...
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Symbol |
Parameter |
Conditions |
Ratings |
Unit | |
VCEO IC VI IF VR Pd Topr Tstg |
Collector-emitter voltage Collector current Input voltage Clamping diode forward current Clamping diode reverse voltage Power dissipation Operating temperature Storage temperature |
Output, H Current per circuit output, L |
0.5 ~ +35 300 0.5 ~ +35 300 35 1.47 1.00 0.80 0.78 40 ~ +85 55 ~ +125 |
V mA V mA V W °C °C | |
Ta= 25, when mounted on board |
M63814P M63814FP M63814GP M63814KP | ||||
M63814P/FP/GP/KP are seven-circuit Single transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.