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M63812GP

Features: `Four package configurations (P, FP, GP and KP)`Medium breakdown voltage (BVCEO35V)`Synchronizing current (IC(max) = 300mA)`With clamping diodes`With zener diodes`Low output saturation voltage`Wide operating temperature range (Ta=40 to +85°C)ApplicationDriving of digit drives of indicati...

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M63812GP: Features: `Four package configurations (P, FP, GP and KP)`Medium breakdown voltage (BVCEO35V)`Synchronizing current (IC(max) = 300mA)`With clamping diodes`With zener diodes`Low output saturation vol...

M63812GP Data Sheet

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Part Number:
M63812GP
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

`Four package configurations (P, FP, GP and KP)
`Medium breakdown voltage (BVCEO35V)
`Synchronizing current (IC(max) = 300mA)
`With clamping diodes
`With zener diodes
`Low output saturation voltage
`Wide operating temperature range (Ta=40 to +85°C)


Application

Driving of digit drives of indication elements (LEDs and lamps) with small signals


Pinout

Connection Diagram


Specifications

Symbol
Parameter
Conditions
Ratings
Unit
VCEO
IC
VI
IF
VR

Pd

Topr
Tstg		 Collector-emitter voltage
Collector current
Input voltage
Clamping diode forward current
Clamping diode reverse voltage

Power dissipation

Operating temperature
Storage temperature
Output, H
Current per circuit output, L
0.5 ~ +35
300
0.5 ~ +35
300
35
1.47
1.00
0.80
0.78
40 ~ +85
55 ~ +125
V
mA
V
mA
V


W

°C
°C
Ta= 25, when
mounted on board		 M63812P
M63812FP
M63812GP
M63812KP



Description

M63812P, M63812FP, M63812GP and M63812KP are seven-circuit Singe transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.




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