Features: `Four package configurations (P, FP, GP and KP)`Medium breakdown voltage (BVCEO35V)`Synchronizing current (IC(max) = 300mA)`With zener diodes`Low output saturation voltage`Wide operating temperature range (Ta=40 to +85°C)ApplicationDriving of digit drives of indication elements (LEDs and...
M63802P: Features: `Four package configurations (P, FP, GP and KP)`Medium breakdown voltage (BVCEO35V)`Synchronizing current (IC(max) = 300mA)`With zener diodes`Low output saturation voltage`Wide operating t...
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SYMBOL | PARAMETER | CONDITIONS | RATING | UNIT | |
VCEO | Collector-emitter voltage | Output, H | 0.5 ~ +35 | V | |
IC | Collector current | Current per circuit output, L | 300 | MA | |
VI | Input voltage | 0.5 ~ +35 | V | ||
Pd | Power dissipation | Ta = 25°C, when mounted on board |
M63802P M63802FP M63802GP M63802KP |
1.47 1.00 0.80 0.78 |
W |
Topr | Operating temperature | 40 ~ +85 | °C | ||
Tstg | Storage temperature | 55 ~ +125 | °C |
M63802P, M63802FP, M63802GP and M63802KP are seven-circuit Singe transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.