Features: *High voltage ----------------Vcc=42V(typ.)*High slew rate----------35V/us(typ.)*High current(Io: peak current)-----------±120mA(min.)*Gain--------------------18.00V/V(typ.)*Output voltage range----------VOL=0.8V(typ.), Vcc-VOH=0.8V(typ.)Application*For capacitive load drive, etc.PinoutS...
M62580P: Features: *High voltage ----------------Vcc=42V(typ.)*High slew rate----------35V/us(typ.)*High current(Io: peak current)-----------±120mA(min.)*Gain--------------------18.00V/V(typ.)*Output voltage...
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Symbol | Parameter | Conditions | Ratings | Unit |
Vcc | Supply voltage | 50 | V | |
Io | Output current | peak current | ±150 | mA |
VIN | Input voltage | 0.0~3.0 | V | |
Pd | Power dissipation | Ta=25ºC | 2.5 | W |
Kq | Thermal derating | Ta>25ºC | 20 | mW/ºC |
Topr | Operating temperature | -20~75 | ºC | |
Tstg | Storage temperature | -40~150 | ºC |
M62580P is a semiconductor integrated circuit designed for capacitive load drive that operates at single power supply. M62580P features high voltage operation with fixed voltage gain (18.00V/V) and built-in pre-amplifier with high slew rate. For output, AB class Amp. can be structured by connecting 2 emitter outputs, also featuring distinctive chracteristics for high current load.