M5M5V4R08J-12

Features:

• Fast access time M5M5V4R08J-12 •••• 12ns(max)
                              M5M5V4R08J-15 •••• 15ns(max)
                              M5M5V4R08J-20 •••• 20ns(max)
• Low power dissipation Active •••••••••• 363mW(typ)
                                         Stand by ••••••• 3.3mW(typ)
• Single +3.3V power supply
• Fully static operation : No clocks, No refresh
• Common data I/O
• Easy memory expansion by S
• Three-state outputs : OR-tie capability
• OE prevents data contention in the I/O bus
• Directly TTL compatible : All inputs and outputs


Pinout




Specifications

Symbol	Parameter	Conditions	Ratings	Unit
Vcc VI VO Pd Topr Tstg Tstg(bias)	Operating temperature Supply voltage Input voltage Output voltage Power dissipation Storage temperature(bias) Storage temperature	With respect to GND Ta=25 C	-2.0* ~ 4.6 -2.0 * ~ VCC+0.5 -2.0 * ~ VCC+0.5 1000 0 ~ 70 -10 ~ 85 -65 ~ 150	V V V mW °C °C °C

*Pulse width 20ns, In case of DC:-0.5V


Description

The M5M5V4R08J is a family of 524288-word by 8-bit static RAMs, fabricated with the high performance CMOS silicon gate process and designed for high speed application.

The M5M5V4R08J is offered in a 36-pin plastic small outline J-lead package(SOJ).

These device operate on a single 3.3V supply, and are directly TTL compatible. They include a power down feature as well.