Features: • Fully registered inputs and outputs for pipelined operation• Fast clock speed: 200 MHz• Fast access time: 3.2 ns• Single 2.5V -5% and +5% power supply VDD• Separate VDDQ for 2.5V or 1.8V I/O• Individual byte write (BWa# - BWd#) controls may be tied L...
M5M5T5636GP 20: Features: • Fully registered inputs and outputs for pipelined operation• Fast clock speed: 200 MHz• Fast access time: 3.2 ns• Single 2.5V -5% and +5% power supply VDD• ...
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Features: `Low stand-by current 0.3A (typ.)`Directly TTL compatible : All inputs and outputs`Easy ...
Features: Low stand-by current 0.3µA (typ.) Directly TTL compatible : All inputs and output...
Features: Low stand-by current 0.3µA (typ.) Directly TTL compatible : All inputs and output...
Symbol |
Parameter |
Conditions |
Ratings |
Unit |
VDD |
Power Supply Voltage |
With respect to VSS |
-1.0*~3.6 |
V |
VDDQ |
I/O Buffer Power Supply Voltage |
-1.0*~3.6 |
V | |
VI |
Input Voltage |
-1.0~VDDQ+1.0** |
V | |
VO |
Output Voltage |
-1.0~VDDQ+1.0** |
V | |
PD |
Maximum Power Dissipation (VDD) |
945 |
mW | |
TOPR |
Operating Temperature |
0~70 |
°C | |
TSTG(bias) |
Storage Temperature(bias) |
-10~85 |
°C | |
TSTG |
Storage Temperature |
-65~150 |
°C |
Note16.* This is 1.0V when pulse width£2ns, and 0.5V in case of DC.
** This is 1.0V~VDDQ+1.0V when pulse width2ns, and 0.5V~VDDQ+0.5V in case of DC.
The M5M5T5636GP is a family of 18M bit synchronous SRAMs organized as 524288-words by 36-bit. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Mitsubishi's SRAMs are fabricated with high performance, low power CMOS technology, providing greater reliability. M5M5T5636GP operates on 2.5V power/ 1.8V I/O supply or a single 2.5V power supply and are 2.5V CMOS compatible.