M5M54R08J-12

Features:

• Fast access time                M5M54R08J-12 •••• 12ns(max)
                                             M5M54R08J-15 •••• 15ns(max)
• Low power dissipation       Active •••••••••• 550mW(typ)
                                             Stand by •••••••••• 5mW(typ)
• Single +5V power supply
• Fully static operation : No clocks, No refresh
• Common data I/O
• Easy memory expansion by S
• Three-state outputs : OR-tie capability
• OE prevents data contention in the I/O bus
• Directly TTL compatible : All inputs and outputs


Application

High-speed memory units


Pinout




Specifications

Symbol	Parameter	Conditions	Ratings	Unit
Vcc	Supply Voltage	With respect to GND	-3.5 ~ 7 *	V
VI	Input Voltage		-3.5 ~ VCC+0.3 *	V
VO	Output Voltage		-3.5 ~ VCC+0.3 *	V
Pd	Power Dissipation	Ta = 25 °C	1000	mW
Topr	Operating Temperature		0~70	°C
Tstg(bias)	Storage temperature (bias)		-10 ~ 85	°C
Tstg	Storage Temperature		-65 ~ 150	°C

Description

The M5M54R08J is a family of 524288-word by 8-bit static RAMs, fabricated with the high performance CMOS silicon gate process and designed for high speed application.

The M5M54R08J is offered in a 36-pin plastic small outline Jlead package(SOJ).

These device operate on a single 5V supply, and are directly TTL compatible. They include a power down feature as well.