M5M5256DVP

The M5M5256DVP is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. Especially the M5M5256DVP,RV are packaged in a 28-pin thin small outline package.Two types of devices are available, M5M5256DVP(normal lead bend type package), M5M5256DRV(reverse lead bend type package). The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by current is small enough for battery back-up application. It is ideal for the memory systems which require simple interface. Using both types of devices, it becomes very easy to design a printed circuit board.

The features of M5M5256DVP can be summarized as (1)single +3.3±0.3V power supply; (2)no clocks, no refresh; (3)data-hold on +2.0V power supply; (4)directly TTL compatible : all inputs and outputs; (5)three-state outputs : OR-tie capability; (6)/OE prevents data contention in the I/O bus; (7)common data I/O; (8)battery backup capability; (9)low stand-by current: 0.05A(typ.).

The absolute maximum ratings of M5M5256DVP are (1)VCC supply voltage: -0.3*~4.6V; (2)VI input voltage: -0.3*~VCC+0.3V(MAX 4.6); (3)VO output voltage: 0~VCC V; (4)PD power dissipation: 700mW; (5)Topr operating temperature: -20~70°C; (6)Tstg storage temperature: -65~150°C.(*-3.0V in case of AC ( Pulse width 30ns )).