M5M5256BP

The M5M5256BP is a 262144-bit CMOS static RAM organized as 32768 words by 8-bits which is fabricated using high-performance double polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high-density and low-power static RAM. It is ideal for the memory systems which require simple interface. The feature of M5M5256BP are as follows: (1)single +5V power supply; (2)no clocks, no refresh; (3)data hold on +2V power supply; (4)directly TTL compatible: all inputs and outputs; (5)three-state outputs: OR-tie capability\simple memory expansion by s; (6)OE prevents data contention in the I/O bus; (7)common data I/O; (8)package: 28pin 600mil DIP.

The absolute maximum ratings of the M5M5256BP are: (1)supply voltage: -0.3~7V; (2)input  voltage:  -0.3~VCC +0.3 V; (3)output voltage: 0~VCC V; (4)power dissipation: 700mW; (5)operating temperature: 0~70; (6)storage temperature: -65~150.

The following is about the electrical characteristics of M5M5256BP:(1)high input voltage: 2.2V min and VCC+0.3V max; (2)low input voltage: -0.3V min and 0.8V max; (3)high output voltage: 2.4V min at IOH = -1mA; (4)low output voltage: 0.4V max at IOL = 2mA; (5)input leakage current: ±1A max at V1 = 0~VCC; (6)output leakage current: ±1A max at S = VIH or OE = VIH, VI/O = 0~VCC; (7)active supply current: 30mA typical and 65mA max at S<0.2, W>VCC-0.2 output open other inputs<0.2 or >VCC-0.3 min cycle; (8)stand by supply current: 2mA max at SVCC-0.2V; (9)input capacitance: V1=GND, V1=25.Vrms, f=1MHz; (10)output capacitance: Vo=GND, Vo=25.Vrms, f=1MHz.