M5M51R16AWG -10H

Features:



• Single +1.8V~2.7V power supply
• Low power down current 0.05A(typ.)
• Directly TTL compatible : All inputs and outputs
• Easy memory expansion and power down by S,BC1 and BC2
• Data hold on +1.0V power supply
• Three-state outputs : OR-tie capability
• OE prevents data contention in the I/O bus
• Common data I/O
• Separate control of lower and upper bytes by BC1 and BC2
• Package
               48-pin chip scale package(CSP)
               Ball pitch : 0.75mm
               Package size: 7.0mm x 8.5mm

Application

Small capacity memory units.


Specifications

Symbol	Parameter	Conditions	Ratings	Unit
Vcc	Supply voltage	With respect to GND	-0.2 ~ 4.6	V
VI	Input voltage		-0.2* ~ Vcc+0.2(max.4.6V)	V
Vo	Output voltage		0 ~ Vcc	V
Pd	Power dissipation	Ta=25°C	1	W
Topr	Operating temperature		0 ~ 70	°C
Tstg	Storage temperature		-65 ~150	°C

* -1.0V in case of AC ( Pulse width 30ns )


Description

The M5M51R16AWG is a 1048576-bit CMOS static RAM organized as 65536 words by 16-bits, which are fabricated using high-performance CMOS technology. The use of CMOS cells and periphery results in a high density and low power static RAM.

The M5M51R16AWG can achieve low stand-by current and low operation current and ideal for the battery back-up application.

The M5M51R16AWG is packaged in a 48-pin chip scale package which is a high reliability and high density surface mount device (SMD). Using this type of devices, it becomes very easy to design a small system.

The M5M51R16AWG is fully compatible with the M5M51R16WG