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M5M51016BTPM5M51016BT

Features: Type name Access time(max) Power supply current Active(max) stand-by(max) M5M51016BTP,RT-70LM5M51016BTP,RT-10L 70ns100ns 30mA(1MHz) 200A(VCC = 5.5V) M5M51016BTP,RT-70LLM5M51016BTP,RT-10LL 70ns100ns 40A(VCC = 5.5V)0.3A(VCC = 3.0V,typ). Single +3.0V power supply. Low...

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SeekIC No. : 004406271 Detail

M5M51016BTPM5M51016BT: Features: Type name Access time(max) Power supply current Active(max) stand-by(max) M5M51016BTP,RT-70LM5M51016BTP,RT-10L 70ns100ns 30mA(1MHz) 200A(VCC = 5.5V) M5M51016BTP,RT-70L...

M5M51016BTPM5M51016BT Data Sheet

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Part Number:
M5M51016BTPM5M51016BT
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

Type name Access time
(max)		 Power supply current
Active
(max)		 stand-by
(max)
M5M51016BTP,RT-70L
M5M51016BTP,RT-10L		 70ns
100ns		 30mA
(1MHz)		 200A
(VCC = 5.5V)
M5M51016BTP,RT-70LL
M5M51016BTP,RT-10LL		 70ns
100ns		 40A
(VCC = 5.5V)
0.3A
(VCC = 3.0V,typ)
. Single +3.0V power supply
. Low stand-by current 0.3A (typ.)
. Directly TTL compatible : All inputs and outputs
. Easy memory expansion and power down by CS, BC1 & BC2
. Data hold on +2V power supply
. Three-state outputs : OR-tie capability
. OE prevents data contention in the I/O bus
. Common data I/O
. Package
  .............................. M5M51016BTP,RT 44pin 400mil TSOP(II)


Application

Small capacity memory units


Pinout

Connection Diagram Connection Diagram


Specifications

Symbol Parameter Conditions Ratings Unit
Vcc Supply voltage With respect to GND 0.3 ~ 4.6 V
VI Input voltage 0.3* ~ Vcc + 0.3 V
VO Output voltage 0 ~ Vcc V
Pd Power dissipation
Ta=25oC		 1 W
Topr Operating temperature   0 ~ 70 oC
Tstg Storage temperature   65 ~ 150 oC



Description

The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of
resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM.

  M5M51016BTP, RT  are low stand-by current and low operation current and ideal for the battery back-up application.

 The M5M51016BTP,RT are  packaged in a 44-pin thin small outline package which is a high reliability and high density surface mount device (SMD). Two types of devices are available. M5M51016BTP(normal lead bend type package),  M5M51016BRT (reverse lead bend type package).  Using both types of devices, it becomes very easy to design a printed circuit board.




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